INSITU IR SPECTROSCOPIC OBSERVATION OF A-SI-H(F) FILMS GROWING UNDER SPONTANEOUS CHEMICAL-DEPOSITION METHOD

被引：13

作者：

WADAYAMA, T ^{[1
]}

KAYAMA, H ^{[1
]}

HATTA, A ^{[1
]}

SUETAKA, W ^{[1
]}

HANNA, J ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

A-Si:H(F); Fluorinated silicon; Hydrogenated silicon; Insitu IR observation; Polarization modulation IR spectroscopy; Spontaneous chemical deposition method;

D O I：

10.1143/JJAP.29.1884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization modulation infrared spectroscopy has been applied to in situ observation of a-Si:H(F) films deposited by the spontaneous chemical deposition (SCD) method. The film showed multiple IR absorption bands due to the formation of various hydrogenated and fluorinated silicon species. These bands increased in intensity with deposition time, although the rates of intensity increase of the bands were different from each other. The absorption intensity change of these bands with the deposition time suggests that the predominant species in the initial stage of the deposition is fluorinated silicon. The exposure to air of the film deposited at a low substrate temperature resulted in the remarkable intensity decrease of the bands due to fluorinated silicon, accompanying the appearance of the Si–O stretching band. © 1990 IOP Publishing Ltd.

引用

页码：1884 / 1888

页数：5

共 18 条

[1]

BELLAMY LJ, 1975, INFRARED SPECTRA COM, V1, P380

[2]

BLAYO N, IN PRESS VACUUM

[3] PREPARATION OF PHOTOCONDUCTIVE AMORPHOUS-SILICON FILMS BY CHEMICAL-DEPOSITION [J].

HANNA, J ;

KOKADO, H ;

SHIMIZU, I .

NIPPON KAGAKU KAISHI, 1987, (11) :2010-2012

[4] PREPARATION OF SI THIN-FILMS BY SPONTANEOUS CHEMICAL-DEPOSITION [J].

HANNA, J ;

KAMO, A ;

KOMIYA, T ;

NGUYEN, HD ;

SHIMIZU, I ;

KOKADO, H .

AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 :11-16

[5]

HANNA J, 1988, MATER RES SOC S P, V118, P79

[6]

Hatta A., 1985, ANAL SCI, V1, P403

[7] INSITU INFRARED REFLECTION ABSORPTION SPECTROSCOPIC CHARACTERIZATION OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITED SIO2-FILMS [J].

KOLLER, KB ;

SCHMIDT, WA ;

BUTLER, JE .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4704-4710

[8]

LEY L, 1980, PHYS REV B, V15, P6140

[9] STRUCTURAL INTERPRETATION OF THE VIBRATIONAL-SPECTRA OF A-SI-H ALLOYS [J].

LUCOVSKY, G ;

NEMANICH, RJ ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1979, 19 (04) :2064-2073

[10] OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].

LUCOVSKY, G ;

YANG, J ;

CHAO, SS ;

TYLER, JE ;

CZUBATYJ, W .

PHYSICAL REVIEW B, 1983, 28 (06) :3225-3233

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