PREPARATION OF PHOTOCONDUCTIVE AMORPHOUS-SILICON FILMS BY CHEMICAL-DEPOSITION

被引：2

作者：

HANNA, J ^{[1
]}

KOKADO, H ^{[1
]}

SHIMIZU, I ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, GRAD SCH NAGATSUTA, YOKOHAMA, KANAGAWA 227, JAPAN

来源：

NIPPON KAGAKU KAISHI | 1987年 / 11期

关键词：

D O I：

10.1246/nikkashi.1987.2010

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：2010 / 2012

页数：3

共 12 条

[1] REACTIONS OF SILANES WITH HALOGENS - CHEMILUMINESCENT PRODUCTS IN ULTRAVIOLET-VISIBLE SPECTRUM [J].

CONNER, CP ;

STEWART, GW ;

LINDSAY, DM ;

GOLE, JL .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (08) :2540-2544

[2]

Hanna J., 1987, Disordered semiconductors, P435

[3]

ITOH H, 1982, 4TH P S DRY PROC IEE, P100

[4] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :159-170

[5] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE [J].

MISHIMA, Y ;

HIROSE, M ;

OSAKA, Y ;

NAGAMINE, K ;

ASHIDA, Y ;

KITAGAWA, N ;

ISOGAYA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01) :L46-L48

[6] PROPERTIES OF A-SI BASED ALLOYS PREPARED FROM FLUORIDES AND HYDROGEN [J].

ODA, S ;

ISHIHARA, S ;

SHIBATA, N ;

TAKAGI, S ;

SHIRAI, H ;

MIYAUCHI, A ;

SHIMIZU, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :877-880

[7]

PANKOVE JI, 1984, SEMICONDUCTORS SEMIM, V21

[8]

SAITOH T, 1982, JPN J APPL PHYS S, V22

[9] DEPOSITION OF ALPHA-SI-H BY HOMOGENEOUS CVD [J].

SCOTT, BA ;

PLECENIK, RM ;

SIMONYI, EE .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :635-638

[10] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON [J].

SHANKS, H ;

FANG, CJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

KALBITZER, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01) :43-56

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