HIGH-POWER 980-NM ALGAAS INGAAS STRAINED QUANTUM-WELL LASERS GROWN BY OMVPE

High-power lattice-strained AlGaAs/InGaAs graded-index separate-confinement heterostructure quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy and fabricated with a self-aligned ridge-waveguide structure. Using a 3-mu-m-wide and 750-mu-m-long AR-HR coated laser, 30 mW of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was also obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.