POSITRON AFFINITY IN (III-V) SEMICONDUCTORS

被引：8

作者：

AOURAG, H ^{[1
]}

KHELIFA, B ^{[1
]}

机构：

[1] UNIV SIDI BEL ABBES,INST ELECTR,22000 SIDI BEL ABBES,ALGERIA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1991年 / 27卷 / 01期

关键词：

D O I：

10.1016/0254-0584(91)90161-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The positron distribution of charge in the plane (110) is calculated for some (III-V) semiconductors. The results show that positrons have a strong affinity for one sort of atom in binary semiconductors. This relative positron affinity should lead to the positron preferentially annihilating with the electrons of that sort of atom in (III-V) semiconductors.

引用

页码：61 / 67

页数：7

共 10 条

[1] CORRELATION BETWEEN THE HIGH-PRESSURE PROPERTIES AND CHARGE-DENSITY IN SI AND GE [J].

AOURAG, H ;

BELAIDI, A ;

KHELIFA, B .

MATERIALS CHEMISTRY AND PHYSICS, 1989, 24 (1-2) :209-214

[2] POSITRON-ANNIHILATION IN SI AND GE [J].

AOURAG, H ;

BELAIDI, A ;

KOBAYASI, T ;

WEST, RN ;

KHELIFA, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 155 (01) :191-200

[3] ELECTRON AND POSITRON DISTRIBUTION FOR THE PLANE (110) IN SI AND GAAS [J].

AOURAG, H ;

BELAIDI, A ;

KOBAYASI, T ;

WEST, RN ;

KHELIFA, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 156 (02) :497-505

[4] CONDUCTION BAND-EDGE CHARGE-DENSITIES IN II-VI COMPOUND SEMICONDUCTORS [J].

AOURAG, H ;

KHELIFA, B ;

HAMERLAINE, L ;

BELARBI, H ;

BELAIDI, A .

PHYSICS LETTERS A, 1990, 145 (8-9) :455-460

[5]

AOURAG H, 1987, THESIS U E ANGLIA

[6] PHASE-TRANSITION EFFECTS OF THE MG-CD SYSTEM ON THE POSITRON-ANNIHILATION PARAMETERS [J].

BELAIDI, A ;

WEST, RN ;

AOURAG, H ;

KHELIFA, B .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (13) :2929-2933

[7] THE EFFECTS OF LATTICE ANISOTROPY ON POSITRON PARAMETERS IN IN-PB ALLOYS [J].

BELAIDI, A ;

WEST, RN .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01) :107-112

[8] ANISOTROPY EFFECTS IN POSITRON AND VACANCY PARAMETERS IN IN-PB ALLOYS [J].

BELAIDI, A ;

WEST, RN .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1988, 18 (05) :1001-1012

[9]

BELAIDI A, 1982, J PHYS, V12, P873

[10] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

← 1 →