CONDUCTION BAND-EDGE CHARGE-DENSITIES IN II-VI COMPOUND SEMICONDUCTORS

被引：16

作者：

AOURAG, H

KHELIFA, B

HAMERLAINE, L

BELARBI, H

BELAIDI, A

机构：

[1] UNIV ORAN ESSENIA,DEPT PHYS,DEPT LAB,ES SENIA 31100,ALGERIA

[2] ECOLE NORMALE SUPER ENSEIGNEMENT TECH ORAN,DEPT PHYS,ORAN 31000,ALGERIA

来源：

PHYSICS LETTERS A | 1990年 / 145卷 / 8-9期

关键词：

D O I：

10.1016/0375-9601(90)90314-E

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The conduction band-edge charge densities of six zinc-blende II-VI compound semiconductors (CdTe, CdSe, CdS, ZnTe, ZnSe, and ZnS) are calculated using the empirical pseudopotential method (EPM) at selected Γ1c, X1c and X3c points. These charge density profiles are discussed on the basis of the bonding and antibonding behaviour. We predict the susceptibility of II-VI compound semiconductors to band structure modification by insertion of small atoms at their tetrahedral interstitial sites. © 1990.

引用

页码：455 / 460

页数：6

共 7 条

[1]

AOURAG H, IN PRESS

[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].