CONDUCTION-BAND-EDGE CHARGE-DENSITIES IN ELEMENTAL AND COMPOUND SEMICONDUCTORS

被引：28

作者：

RICHARDSON, SL ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.35.1388

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1388 / 1392

页数：5

共 14 条

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[9] ELECTRON CHARGE-DENSITIES AT CONDUCTION-BAND EDGES OF SEMICONDUCTORS [J].

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COHEN, ML ;

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