MEASUREMENT OF I-V CURVES OF SILICON-ON-INSULATOR (SOI) MOSFETS WITHOUT SELF-HEATING

被引：47

作者：

JENKINS, KA

SUN, JYC

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 04期

关键词：

D O I：

10.1109/55.372496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for measuring the output (I-D-V-D) characteristics of SOI MOSFET's without self-heating is described, The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 mu m bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of dc power is also illustrated.

引用

页码：145 / 147

页数：3

共 6 条

[1] USE OF NOISE THERMOMETRY TO STUDY THE EFFECTS OF SELF-HEATING IN SUBMICROMETER SOI MOSFETS [J].