CHARACTERIZATION OF PURE GERMANIUM FOR DETECTOR FABRICATION

[1] BAERTSCH RD, 1972, IEEE T NUCL SCI, VNS19, P275

[2] BERNINGER WE, UNPUBLISHED DATA

[3] ETCH PITS IN GERMANIUM AND THEIR RELATION TO HARDNESS [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 105 - &

[4] HALL RN, 1971, IEEE T NUCL SCI, VNS18, P160

[5] LLACER J, UNPUBLISHED COMMUNIC

[6] ANALYSIS FOR SI CONTAMINATION IN GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1221 - &

[7] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[1] BAERTSCH RD, 1972, IEEE T NUCL SCI, VNS19, P275

[2] BERNINGER WE, UNPUBLISHED DATA

[3] ETCH PITS IN GERMANIUM AND THEIR RELATION TO HARDNESS [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 105 - &

[4] HALL RN, 1971, IEEE T NUCL SCI, VNS18, P160

[5] LLACER J, UNPUBLISHED COMMUNIC

[6] ANALYSIS FOR SI CONTAMINATION IN GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1221 - &

[7] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255