SWEEP-OUT EXPERIMENTS - A NEW SPECTROSCOPY FOR THE ELECTRONIC DENSITY OF STATES IN DOPED SEMICONDUCTORS

被引：2

作者：

BRANZ, HM

SILVER, M

ADLER, D

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1988年 / 57卷 / 02期

关键词：

D O I：

10.1080/13642818808201620

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：271 / 282

页数：12

共 21 条

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[7] BRANZ HM, 1987, IN PRESS PHYS REV B
[8] COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9
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