ANALYSIS OF UHLIG DEFECT MODEL OF OXIDATION KINETICS

被引：14

作者：

FROMHOLD, AT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 09期

关键词：

D O I：

10.1149/1.2411462

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：882 / &

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[5] SCHOTTKY EMISSION AS A RATE-LIMITING FACTOR IN THERMAL OXIDATION OF METALS
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[6] KINETICS OF OXIDE FILM GROWTH ON METAL CRYSTALS .1. FORMULATION AND NUMERICAL SOLUTIONS
FROMHOLD, AT
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) : 1081 - +
[7] KINETICS OF OXIDE FILM GROWTH ON METAL CRYSTALS - THERMAL ELECTRON EMISSION AND IONIC DIFFUSION
FROMHOLD, AT
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[J]. PHYSICAL REVIEW, 1967, 163 (03): : 650 - &
[8] KINETICS OF OXIDE FILM GROWTH ON METAL CRYSTALS - ELECTRON TUNNELING AND IONIC DIFFUSION
FROMHOLD, AT
COOK, EL
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[9] SPACE CHARGE IN GROWING OXIDE FILMS .4. RATE EFFECTS DEDUCED BY AVERAGING TECHNIQUE
FROMHOLD, AT
[J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (11) : 3335 - &
[10] FROMHOLD AT, 1965, B AM PHYS SOC, V10, P454

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