DOUBLE EPITAXY IMPROVES SINGLE-PHOTON AVALANCHE-DIODE PERFORMANCE

被引：129

作者：

LACAITA, A ^{[1
]}

GHIONI, M ^{[1
]}

COVA, S ^{[1
]}

机构：

[1] POLITECN MILAN,CNR,CTR ELETTRON QUANTIST & STRUMENTAZ ELETTRON,I-20133 MILAN,ITALY

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 13期

关键词：

D O I：

10.1049/el:19890567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：841 / 843

页数：3

共 8 条

[1] TOWARDS PICOSECOND RESOLUTION WITH SINGLE-PHOTON AVALANCHE-DIODES [J].

COVA, S ;

LONGONI, A ;

ANDREONI, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (03) :408-412

[2] AVALANCHE SEMICONDUCTOR DETECTOR FOR SINGLE OPTICAL PHOTONS WITH A TIME RESOLUTION OF 60 PS [J].

COVA, S ;

RIPAMONTI, G ;

LACAITA, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03) :482-487

[3] ACTIVE-QUENCHING AND GATING CIRCUITS FOR SINGLE-PHOTON AVALANCHE-DIODES (SPADS) [J].

COVA, S ;

LONGONI, A ;

RIPAMONTI, G .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) :599-601

[4] NEW SILICON EPITAXIAL AVALANCHE-DIODE FOR SINGLE-PHOTON TIMING AT ROOM-TEMPERATURE [J].

GHIONI, M ;

COVA, S ;

LACAITA, A ;

RIPAMONTI, G .

ELECTRONICS LETTERS, 1988, 24 (24) :1476-1477

[5] MECHANISMS CONTRIBUTING TO NOISE PULSE RATE OF AVALANCHE DIODES [J].

HAITZ, RH .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3123-&

[6] 1.52-MU-M ROOM-TEMPERATURE PHOTON-COUNTING OPTICAL-TIME DOMAIN REFLECTOMETER [J].

LEVINE, BF ;

BETHEA, CG ;

CAMPBELL, JC .

ELECTRONICS LETTERS, 1985, 21 (05) :194-196

[7] DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES - THEORY [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :703-&

[8] CARRIER DIFFUSION EFFECTS IN THE TIME-RESPONSE OF A FAST PHOTODIODE [J].

RIPAMONTI, G ;

COVA, S .

SOLID-STATE ELECTRONICS, 1985, 28 (09) :925-931

← 1 →