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PROPERTIES OF ALUMINUM OXIDE OBTAINED BY HYDROLYSIS OF AICI3
被引:44
作者
:
TSUJIDE, T
论文数:
0
引用数:
0
h-index:
0
TSUJIDE, T
NAKANUMA, S
论文数:
0
引用数:
0
h-index:
0
NAKANUMA, S
IKUSHIMA, Y
论文数:
0
引用数:
0
h-index:
0
IKUSHIMA, Y
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1970年
/ 117卷
/ 05期
关键词
:
D O I
:
10.1149/1.2407609
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:703 / +
页数:1
相关论文
共 30 条
[1]
DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
: 948
-
&
[2]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[3]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 300
-
&
[4]
DOO VY, 1969, MAY NEW YORK M SOC
[5]
PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON
FERRIEU, E
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Technologie de l'Informatique, Centre d'Etudes Nucleaires de Grenoble
FERRIEU, E
PRUNIAUX, B
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Technologie de l'Informatique, Centre d'Etudes Nucleaires de Grenoble
PRUNIAUX, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 1008
-
+
[6]
PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
FRIESER, RG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
: 357
-
&
[7]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[8]
HERMAN EP, 1965, IEEE T, VED12, P167
[9]
STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 657
-
+
[10]
HOLMESSIEDLE AG, 1969, SOLID STATE TECHNOL, V12, P40
←
1
2
3
→
共 30 条
[1]
DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
: 948
-
&
[2]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[3]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 300
-
&
[4]
DOO VY, 1969, MAY NEW YORK M SOC
[5]
PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON
FERRIEU, E
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Technologie de l'Informatique, Centre d'Etudes Nucleaires de Grenoble
FERRIEU, E
PRUNIAUX, B
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Technologie de l'Informatique, Centre d'Etudes Nucleaires de Grenoble
PRUNIAUX, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 1008
-
+
[6]
PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
FRIESER, RG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
: 357
-
&
[7]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[8]
HERMAN EP, 1965, IEEE T, VED12, P167
[9]
STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 657
-
+
[10]
HOLMESSIEDLE AG, 1969, SOLID STATE TECHNOL, V12, P40
←
1
2
3
→