SURFACE-STRUCTURE, BONDING, AND DYNAMICS - UNIVERSALITY OF ZINC BLENDE (110) POTENTIAL-ENERGY SURFACES

被引:14
作者
GODIN, TJ [1 ]
LAFEMINA, JP [1 ]
DUKE, CB [1 ]
机构
[1] XEROX CORP, WEBSTER RES CTR, WEBSTER, NY 14580 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.578025
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using a tight-binding, total energy (TBTE) model we examine the hypothesis that the potential energy surfaces (PES) describing the (110) cleavage faces of the tetrahedrally coordinated zinc blende structure compound semiconductors exhibit a common "universal" form if expressed in terms of suitably scaled parameters. TBTE calculations on both III-V and II-VI compounds reveal a linear scaling with bulk lattice constant of the geometric parameters of the reconstructed surfaces. This scaling is analogous to that found using low-energy, electron-diffraction surface-structure determination. The surface atomic force constants (found from a TBTE calculation) also scale monotonically with the lattice constant. Using TBTE models proposed previously for GaP, GaAs, GaSb, InP, InSb, and ZnSe, we find that the force constants scale as the inverse square of the bulk lattice constant. These results suggest that if distances are measured in units of the bulk lattice constant, the PES may be a universal function for the cleavage surfaces of zinc blende structure compound semiconductors, on average, with small fluctuations from this average occurring in individual materials.
引用
收藏
页码:2059 / 2065
页数:7
相关论文
共 27 条
[1]   CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES [J].
ALVES, JLA ;
HEBENSTREIT, J ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1991, 44 (12) :6188-6198
[2]  
BRUESCH P, 1982, PHONONS THEORY EXPT, V1, P129
[3]   SEMICONDUCTOR SURFACE RECONSTRUCTION [J].
CHADI, DJ .
VACUUM, 1983, 33 (10-1) :613-619
[4]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[5]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[6]   THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1984, 29 (02) :785-792
[7]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[8]   MECHANISM AND CONSEQUENCES OF SURFACE RECONSTRUCTION ON THE CLEAVAGE FACES OF WURTZITE-STRUCTURE COMPOUND SEMICONDUCTORS [J].
DUKE, CB ;
WANG, YR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (03) :692-695
[9]   STRUCTURAL CHEMISTRY OF THE CLEAVAGE FACES OF COMPOUND SEMICONDUCTORS [J].
DUKE, CB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :732-735
[10]  
DUKE CB, IN PRESS RECONSTRUCT