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CONFINEMENT AND STRAIN PROFILES PRODUCED BY CATION INTERDIFFUSION IN IN0.53GA0.47AS/INP QUANTUM-WELLS

被引：10
作者：
MICALLEF, J
LI, EH
WEISS, BL
机构：
[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期
关键词：
D O I：
10.1063/1.107906
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By considering cation interdiffusion only, we show that the confinement profile obtained after disordering a lattice-matched InGaAs/InP single quantum well differs from that of disordered AlGaAs/GaAs and InGaAs/GaAs quantum-well structures. An abrupt confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. In the early stages of disordering, a large strain buildup results. The bulk band gap of the disordered structure, together with the effects of this strain on the band gap, give rise to "miniwells" inside the potential wells.
引用
收藏
页码：435 / 437
页数：3
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