CONFINEMENT SUBBANDS IN AN INGAAS/GAAS NONSQUARE QUANTUM-WELL

被引：15

作者：

LI, EH

MICALLEF, J

WEISS, BL

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey Guildjord Surrey GUXH

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 1A-B期

关键词：

INGAAS/GAAS; NONSQUARE QUANTUM WELL; THERMAL INDUCED INTERDIFFUSION; BOUND STATE; STRAIN;

D O I：

10.1143/JJAP.31.L7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In0.2Ga0.8As/GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.

引用

页码：L7 / L10

页数：4

共 15 条

[1]

BASTARD G, 1991, SOLID STATE PHYS, V44, P229

[2] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].