INTERFACIAL-BAND DISCONTINUITIES FOR STRAINED LAYERS OF INXGA1-XAS GROWN ON (100) GAAS

被引：38

作者：

MARIE, X ^{[1
]}

BARRAU, J ^{[1
]}

BROUSSEAU, B ^{[1
]}

AMAND, T ^{[1
]}

BROUSSEAU, M ^{[1
]}

RAO, EVK ^{[1
]}

ALEXANDRE, F ^{[1
]}

机构：

[1] CTR NATL TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.347369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of excitonic transitions in pseudomorphic single quantum wells of In(x)Ga11-x As grown on a GaAs substrate is presented. The experimental data are obtained by the in-plane photocurrent spectroscopy technique. The interpretation, which is based on the deformation potential and elastic theories, includes valence-band mixing with no adjustable parameters. The present experimental results, and those compiled from recently published data, are well interpreted from a unique set of measured parameters. From calculations and experiments it emerges that the light holes confine in the strained ternary for all In fractions below 0.83.

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页码：812 / 815

页数：4

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