EVAPORATION LOSS AND DIFFUSION OF ANTIMONY IN SILICON UNDER PULSED LASER IRRADIATION

被引：6

作者：

JAIN, AK

KULKARNI, VN

SOOD, DK

SUNDARARAMAN, M

YADAV, RDS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1980年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(80)91296-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：473 / 477

页数：5

共 17 条

[1] PROPERTIES OF LASER-ASSISTED DOPING IN SILICON [J].

AFFOLTER, K ;

LUTHY, W ;

VONALLMEN, M .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :185-187

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[4] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J].

BEAN, JC ;

LEAMY, HJ ;

POATE, JM ;

ROZGONYI, GA ;

SHENG, TT ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :227-230

[5] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[6] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

[7] LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON [J].

FOTI, G ;

CAMPISANO, SU ;

RIMINI, E ;

VITALI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2569-2571

[8] LASER-INDUCED SURFACE ALLOY FORMATION AND DIFFUSION OF ANTIMONY IN ALUMINUM [J].

JAIN, AK ;

KULKARNI, VN ;

SOOD, DK ;

SUNDARARAMAN, M ;

YADAV, RDS .

NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :275-282

[9] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].

LEAMY, HJ ;

ROZGONYI, GA ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :535-537

[10] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

← 1 2 →