BALLISTIC ELECTRON-TRANSPORT IN A NONPARABOLIC BAND

被引：7

作者：

SOCHA, JB

REES, GJ

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 23期

关键词：

D O I：

10.1049/el:19800622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：872 / 873

页数：2

相关论文

共 4 条

[1] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J].

EASTMAN, LF ;

STALL, R ;

WOODARD, D ;

DANDEKAR, N ;

WOOD, CEC ;

SHUR, MS ;

BOARD, K .

ELECTRONICS LETTERS, 1980, 16 (13) :524-525

[2] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[3] GAAS N+-P--N+ BALLISTIC STRUCTURE [J].

SHUR, MS ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (13) :522-523

[4] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683