CRYSTAL-STATE AMORPHOUS-STATE TRANSITION IN LOW-TEMPERATURE SILICON HOMOEPITAXY
被引:24
作者:
MURTY, MVR
论文数: 0引用数: 0
h-index: 0
机构:Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena
MURTY, MVR
ATWATER, HA
论文数: 0引用数: 0
h-index: 0
机构:Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena
ATWATER, HA
机构:
[1] Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena
来源:
PHYSICAL REVIEW B
|
1994年
/
49卷
/
12期
关键词:
D O I:
10.1103/PhysRevB.49.8483
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Conventional molecular-beam epitaxy of Si(001) at low temperatures proceeds epitaxially up to a finite thickness followed by a crystalline-to-amorphous transition. Concurrent low-energy Ar+ ion irradiation during deposition results in an increase in epitaxial thickness. Surface smoothing is shown to be the primary effect of Ar+ ion irradiation. A possible pathway to the formation of amorphous silicon is the nucleation of twin boundaries on {111} planes. The intersection of a twin boundary with other {111} or {001} planes results in the formation of five- and seven-member rings which leads to the crystalline-to-amorphous transition.