CRYSTAL-STATE AMORPHOUS-STATE TRANSITION IN LOW-TEMPERATURE SILICON HOMOEPITAXY

被引:24
作者
MURTY, MVR
ATWATER, HA
机构
[1] Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 12期
关键词
D O I
10.1103/PhysRevB.49.8483
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conventional molecular-beam epitaxy of Si(001) at low temperatures proceeds epitaxially up to a finite thickness followed by a crystalline-to-amorphous transition. Concurrent low-energy Ar+ ion irradiation during deposition results in an increase in epitaxial thickness. Surface smoothing is shown to be the primary effect of Ar+ ion irradiation. A possible pathway to the formation of amorphous silicon is the nucleation of twin boundaries on {111} planes. The intersection of a twin boundary with other {111} or {001} planes results in the formation of five- and seven-member rings which leads to the crystalline-to-amorphous transition.
引用
收藏
页码:8483 / 8486
页数:4
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