LOW-TEMPERATURE HOMOEPITAXY ON SI(111)

被引：52

作者：

WEIR, BE

FREER, BS

HEADRICK, RL

EAGLESHAM, DJ

GILMER, GH

BEVK, J

FELDMAN, LC

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974-2070

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.105966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si (111). For 350 angstrom films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of almost-equal-to 400-degrees-C; this is compared to almost-equal-to 100-degrees-C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.

引用

页码：204 / 206

页数：3

共 12 条

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[2]

BAUERLE F, 1972, J APPL PHYS, V43, P3917

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