IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS

被引：93

作者：

STIEVENARD, D ^{[1
]}

BODDAERT, X ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.34.4048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4048 / 4058

页数：11

共 49 条

[1] PHOTOABSORPTION EFFECTS IN LOW-TEMPERATURE ELECTRON-IRRADIATED GERMANIUM [J].

ARIMURA, I .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :21-25

[2] THE OBSERVATION OF ANTISITE DEFECTS IN N-TYPE AND UNDOPED GAAS FOLLOWING ELECTRON-IRRADIATION AND ANNEALING [J].

BEALL, RB ;

NEWMAN, RC ;

WHITEHOUSE, JE ;

WOODHEAD, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (17) :3273-3283

[3]

BEALL RB, UNPUB J PHYS C

[4] ENHANCED DIFFUSION MECHANISMS [J].

BOURGOIN, JC ;

CORBETT, JW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :157-188

[5]

BOURGOIN JC, 1983, POINT DEFECT SEMICON, P264

[6]

BOURGOIN JC, 1983, POINT DEFECTS SEMICO, P251

[7]

BOURGOIN JC, 1983, POINT DEFECTS SEMICO, pCH8

[8]

BOURGOIN JC, 1971, IEEE T NUCL SCI, V18, P11

[9] INTERSTITIAL DEFECTS INVOLVING CARBON IN IRRADIATED SILICON [J].

BROZEL, MR ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :243-248

[10] IRRADIATION DAMAGE IN N-TYPE GERMANIUM AT 4.2 DEGREES K [J].

CALLCOTT, TA ;

MACKAY, JW .

PHYSICAL REVIEW, 1967, 161 (03) :698-+

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