PREPARATION AND CHARACTERIZATION OF THIN-FILMS OF ALUMINA BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引:28
作者
FOURNIER, J
DESISTO, W
BRUSASCO, R
SOSNOWSKI, M
KERSHAW, R
BAGLIO, J
DWIGHT, K
WOLD, A
机构
[1] BROWN UNIV,DEPT CHEM,PROVIDENCE,RI 02912
[2] BROWN UNIV,MAT RES LAB,PROVIDENCE,RI 02912
[3] GTE LABS INC,WALTHAM,MA 02254
关键词
D O I
10.1016/0025-5408(88)90221-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:31 / 36
页数:6
相关论文
共 16 条
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[3]  
BALOG M, 1972, J CRYST GROWTH, V17, P291
[4]   PREPARATION AND CHARACTERIZATION OF ALUMINA FILMS BY SOL-GEL METHOD [J].
BRUSASCO, R ;
KERSHAW, R ;
BAGLIO, J ;
DWIGHT, K ;
WOLD, A .
MATERIALS RESEARCH BULLETIN, 1986, 21 (03) :301-306
[5]  
BRUSASCO R, 1987, THESIS BROWN U
[6]   PROCESSES IN INTERFACIAL ZONES DURING CHEMICAL VAPOR-DEPOSITION - ASPECTS OF KINETICS, MECHANISMS, ADHESION AND SUBSTRATE ATOM TRANSPORT [J].
CARLSSON, JO .
THIN SOLID FILMS, 1985, 130 (3-4) :261-282
[7]  
DEAL BE, IN PRESS INTEGRATED
[8]  
DUFFY MT, 1970, RCA REV, V754
[9]  
FAIR RB, 1981, APPLIED SOLID ST B S, V2
[10]   SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].
FROSCH, CJ ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552