FORMATION OF SILICON MICROMIRRORS BY ANISOTROPIC ETCHING

被引：4

作者：

CORNELY, RH ^{[1
]}

MARCUS, RB ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 29卷 / 03期

关键词：

D O I：

10.1016/0924-4247(91)80021-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical silicon structures, with dimensions of the order of 30-mu-m deep, 40-mu-m wide and 0.1-4-mu-m thick, are made by anisotropic etching of {100} wafers using SiO2 etch masks and EDP and KOH etchants. The mirror structures are to reflect 15-mu-m diameter optical beams. Two approaches for solving the serious problem of convex corner etching associated with the formation of micron-sized structures have been studied: one involves sacrificial structures and the other involves growth of a vertical oxide.

引用

页码：241 / 250

页数：10

共 14 条

[1]

ABUZEID MM, 1984, J ELECTROCHEM SOC, V131, P2139

[2]

BASSOUS E, 1978, IEEE T ELECTRON DEV, V25, P1778

[3] ANISOTROPIC ETCHING OF SILICON [J].