OPTOELECTRONIC DEVICES BY GSMBE

被引：14

作者：

GOLDSTEIN, L

机构：

[1] Laboratoires de Marcoussis, F-91460 Marcoussis, Route de Nozay

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

Lasers; Semiconductor - Molecular Beam Epitaxy - Optoelectronic Devices - Semiconducting Gallium Compounds;

D O I：

10.1016/0022-0248(90)90344-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of high quality InP and GaInAsP alloy by gas source molecular beam epitaxy (GSMBE) is of high interest for the realization of optoelectronic devices in the wavelength region of 1.3-1.55 μm. This epitaxial technique is also well adapted to the growth of quantum well structure with very sharp interfaces. Optical devices of high performances, i.e. semiconductor amplifier and distributed feedback multi-quantum well (DFB-MQW) lasers, are fabricated with a hybrid process with GSMBE for the active structure and liquid phase epitaxy (LPE) for the regrowth of lateral confinement layers. These devices show excellent electrical and optical characteristics. © 1990.

引用

页码：93 / 96

页数：4

共 6 条

[1] 1.5-MU-M GAINAS/GAINASP GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE QUANTUM WELL (GRIN-SCH-MQW) LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].