PHOTOSTIMULATED EVAPORATION OF SIO2 AT ROOM-TEMPERATURE BY UNDULATOR IRRADIATION AND ITS DEPENDENCE ON SAMPLE FABRICATION

被引：8

作者：

AWAZU, K ^{[1
]}

ONUKI, H ^{[1
]}

IIJIMA, S ^{[1
]}

WATANABE, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 179卷

关键词：

D O I：

10.1016/0022-3093(94)90705-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ablation of SiO2 films by irradiation of undulator light was examined on samples fabricated by chemical vapor deposition (CVD) and thermal oxidation of silicon. CVD samples having different values of x in SiOx were prepared by changing the mixture ratio of SiH4 and N2O. The ablation rate increased with decreasing of value of x in SiOx. Thermal growth oxide of silicon was also ablated by undulator irradiation at room temperature. The ablation rate increased with increasing excitation energy.

引用

收藏

页码：276 / 280

页数：5

相关论文

共 18 条

[1] PHOTOSTIMULATED EVAPORATION OF SIO2-FILMS BY SYNCHROTRON RADIATION [J].

AKAZAWA, H ;

UTSUMI, Y ;

TAKAHASHI, J ;

URISU, T .

APPLIED PHYSICS LETTERS, 1990, 57 (22) :2302-2304

[2] PHOTOSTIMULATED EVAPORATION OF SIO2 AND SI3N4 FILMS BY SYNCHROTRON RADIATION AND ITS APPLICATION FOR LOW-TEMPERATURE CLEANING OF SI SURFACES [J].

AKAZAWA, H ;

TAKAHASHI, J ;

UTSUMI, Y ;

KAWASHIMA, I ;

URISU, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1991, 9 (05) :2653-2661

[3] OPTICAL-PROPERTIES OF OXYGEN-DEFICIENT CENTERS IN SILICA GLASSES FABRICATED IN H2 OR VACUUM AMBIENT [J].

AWAZU, K ;

KAWAZOE, H ;

MUTA, K .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :69-74

[4] STRUCTURAL IMPERFECTIONS IN SILICON DIOXIDE FILMS IDENTIFIED WITH VACUUM ULTRAVIOLET OPTICAL-ABSORPTION MEASUREMENTS [J].

AWAZU, K ;

KAWAZOE, H ;

SAITO, Y ;

WATANABE, K ;

ANDO, T .

APPLIED PHYSICS LETTERS, 1991, 59 (05) :528-530

[5]

DEVINE RBA, 1988, PHYSICS TECHNOLOGY A

[6] EVIDENCE FOR A WIDE CONTINUUM OF POLYMORPHS IN ALPHA-SIO2 [J].

FIORI, C ;

DEVINE, RAB .

PHYSICAL REVIEW B, 1986, 33 (04) :2972-2974

[7] HIGH-RESOLUTION ULTRAVIOLET PHOTOABLATION OF SIOX FILMS [J].

FIORI, C ;

DEVINE, RAB .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :361-362

[8] ELECTRON-SPIN RESONANCE AND HOPPING CONDUCTIVITY OF A-SIOX [J].

HOLZENKAMPFER, E ;

RICHTER, FW ;

STUKE, J ;

VOGETGROTE, U .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :327-338

[9] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8 [J].

ITOH, U ;

TOYOSHIMA, Y ;

ONUKI, H ;

WASHIDA, N ;

IBUKI, T .

JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) :4867-4872

[10]

KUROSAWA K, 1991, SURF SCI, V242, P475, DOI 10.1016/0039-6028(91)90312-G