PHOTOSTIMULATED EVAPORATION OF SIO2-FILMS BY SYNCHROTRON RADIATION

被引：58

作者：

AKAZAWA, H

UTSUMI, Y

TAKAHASHI, J

URISU, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 3-1, Morinosato Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 22期

关键词：

D O I：

10.1063/1.104167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Irradiation by synchrotron radiation on SiO2 films induces continuous removal of this material at elevated temperatures. The photostimulated evaporation rate for a thermally grown SiO2 film increases steeply with temperature giving an activation energy of 0.7 eV. The experimental results indicate that photon-induced bond breaking assists decomposition and thermal desorption of the film. Applications to microfabrication of a line-and-space pattern and low-temperature cleaning of Si(100) surface are demonstrated.

引用

页码：2302 / 2304

页数：3

共 12 条

[1] PHOTON-INDUCED OXYGEN LOSS IN THIN SIO2-FILMS
FIORI, C
DEVINE, RAB
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (23) : 2081 - 2083
[2] SYNCHROTRON RADIATION-ASSISTED ETCHING OF SILICON SURFACE
HAYASAKA, N
HIRAYA, A
SHOBATAKE, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1110 - L1112
[3] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE
ISHIZAKA, A
SHIRAKI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671
[4] ELECTRONIC EXCITATION MECHANISM OF SPUTTERING AND TRACK FORMATION BY ENERGETIC IONS IN THE ELECTRONIC STOPPING REGIME
ITOH, N
NAKAYAMA, T
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 550 - 555
[5] KELLY R, 1985, NUCL INSTRUM METH B, V9, P329, DOI 10.1016/0168-583X(85)90760-8
[6] SYNCHROTRON RADIATION-INDUCED ETCHING OF A CARBON-FILM IN AN OXYGEN GAS
KYURAGI, H
URISU, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1254 - 1256
[7] SYNCHROTRON RADIATION-EXCITED CHEMICAL VAPOR-DEPOSITION OF SIXNYHZ FILM
KYURAGI, H
URISU, T
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2035 - 2037
[8] SYNCHROTRON-RADIATION-STIMULATED DESORPTION OF O+ IONS FROM AN OXIDIZED SILICON SURFACE
NIWANO, M
KATAKURA, H
TAKAKUWA, Y
MIYAMOTO, N
HIRAIWA, A
YAGI, K
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (12) : 1125 - 1127
[9] Samsonov G V, 1973, OXIDE HDB
[10] TAKAHASHI J, 1988, 1988 P SSDM TOK, P88

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