DEPTH PROFILING AND INTERFACE ANALYSIS USING SPECTROSCOPIC ELLIPSOMETRY

被引:34
作者
THEETEN, JB
ERMAN, M
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词
D O I
10.1116/1.571338
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:471 / 475
页数:5
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共 20 条
[1]  
Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P188
[2]  
Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P227
[3]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[4]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[5]   NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS [J].
DELORD, JF ;
SCHROTT, AG ;
FAIN, SC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :517-520
[6]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[7]   OPTICAL-PROPERTIES OF ULTRAFINE GOLD PARTICLES [J].
GRANQVIST, CG ;
HUNDERI, O .
PHYSICAL REVIEW B, 1977, 16 (08) :3513-3534
[8]  
HABRAKEN FHP, 1982, J APPL PHYS, V53, P352
[9]   CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J].
LIESKE, N ;
HEZEL, R .
THIN SOLID FILMS, 1979, 61 (02) :217-228
[10]   OXIDE FORMATION ON THE SILICON (111) SURFACE STUDIED BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J].
LIESKE, N ;
HEZEL, R .
THIN SOLID FILMS, 1979, 61 (02) :197-202