AUGER RECOMBINATION IN PBSNTE-LIKE SEMICONDUCTORS

被引：28

作者：

ZIEP, O

MOCKER, M

GENZOW, D

HERRMANN, KH

机构：

[1] HUMBOLDT UNIV,BEREICH THEORET HALBLEITERPHYS,DDR-104 BERLIN,GER DEM REP

[2] HUMBOLDT UNIV,BEREICH EXPTL HALBLEITERPHYS,DDR-104 BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 90卷 / 01期

关键词：

D O I：

10.1002/pssb.2220900121

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：197 / 205

页数：9

共 18 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2]

[Anonymous], SIMMETRIYA DEFORMATS

[3] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].

ANTONCIK, E ;

LANDSBERG, PT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&

[4] IMPACT IONIZATION THRESHOLDS IN SEMICONDUCTORS [J].

BALLINGER, RA ;

MAJOR, KG ;

MALLINSON, JR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (16) :2573-2585

[5]

BARYSHEV NS, 1961, FIZ TVERD TELA, V3, P2861

[6]

Beattie A.R., 1958, P R SOC LOND, V249, P16

[7] QUANTUM EFFICIENCY IN INSB [J].

BEATTIE, AR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1049-&

[8]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, V3

[9]

DRABKIN IA, 1968, FIZ TEKH POLUPROV, V2, P1528

[10] AUGER RECOMBINATION AND JUNCTION RESISTANCE IN LEAD-TIN TELLURIDE [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2565-2568

← 1 2 →