SOME CONSIDERATIONS OF THE THERMODYNAMICS AND KINETICS OF THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN

被引：43

作者：

HITCHMAN, ML ^{[1
]}

JOBSON, AD ^{[1
]}

KWAKMAN, LFT ^{[1
]}

机构：

[1] ASMI AMTC,3723 BJ BILTHOVEN,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90552-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：312 / 337

页数：26

共 60 条

[1]

BEINGLASS I, 1981, ELECTROCHEM SOC EXT, V812, P921

[2] VAPOR DEPOSITION OF TUNGSTEN BY HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDE - PROCESS VARIABLES AND PROPERTIES OF DEPOSIT [J].

BERKELEY, JF ;

BRENNER, A ;

REID, WE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) :561-&

[3]

Blewer R. S., 1984, 1984 Proceedings of the First International IEEE VLSI Multilevel Interconnection Conference (Cat. No. 84CH1992-2), P153

[4] 2-STEP CATALYTIC REACTIONS [J].

BOUDART, M .

AICHE JOURNAL, 1972, 18 (03) :465-&

[5]

BROADBENT EK, 1985, SOLID STATE TECHNOL, V28, P51

[6] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].

BROADBENT, EK ;

RAMILLER, CL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433

[7] FILM THICKNESS DEPENDENCE OF SILICON REDUCED LPCVD TUNGSTEN ON NATIVE OXIDE THICKNESS [J].

BUSTA, HH ;

TANG, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1195-1200

[8] SELECTIVE DEPOSITION OF TUNGSTEN - PREDICTION OF SELECTIVITY [J].

CARLSSON, JO ;

BOMAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2298-2302

[9]

CHEUNG H, 1972, 3RD P INT C CHEM VAP, P136

[10] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434

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