ZERO-NET-STRAIN AND CONVENTIONALLY STRAINED INGAASP/INP MULTIQUANTUM WELL LASERS

被引：16

作者：

SELTZER, CP

PERRIN, SD

TATHAM, MC

COOPER, DM

机构：

[1] BT Laboratories, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparison is made between 16 well zero-net-strain and conventionally strained MQW lasers. Short devices of each structure exhibit low threshold currents and high output powers. For both types of device, the value of T0 is found to be smaller than for 16 well unstrained lasers. Analysis of RIN spectra imply maximum 3 dB bandwidths in the range 34-42 GHz.

引用

收藏

页码：63 / 65

页数：3

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