THE EPITAXY OF GERMANIUM ON GALLIUM-ARSENIDE

被引：18

作者：

AYERS, JE

GHANDHI, SK

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 89卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90196-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：371 / 377

页数：7

共 12 条

[1] THE THERMAL DECOMPOSITION OF GERMANE .2. MECHANISM [J].

FENSHAM, PJ ;

TAMARU, K ;

BOUDART, M ;

TAYLOR, H .

JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (09) :806-808

[2] SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J].

HENDERSON, RC ;

HELM, RF .

SURFACE SCIENCE, 1972, 30 (02) :310-+

[3] The catalytic decomposition of germane [J].

Hogness, TR ;

Johnson, WC .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1932, 54 :3583-3592

[4] EPITAXIAL-GROWTH OF GE ON GAAS SUBSTRATES [J].

KRAUTLE, H ;

ROENTGEN, P ;

BENEKING, H .

JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) :439-443

[5] A MODEL FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL GE AND SI FILMS FROM GEH2 AND SIH2 RADICALS PRODUCED BY UV PHOTOLYSIS OF GEH4 AND SIH4 [J].

MOTOOKA, T ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2015-2018

[6] GALLIUM-ARSENIC-TIN AND GALLIUM-ARSENIC-GERMANIUM TERNARY SYSTEMS [J].

PANISH, MB .

JOURNAL OF THE LESS-COMMON METALS, 1966, 10 (06) :416-&

[7] EPITAXIAL DEPOSITION OF GERMANIUM ONTO SEMI-INSULATING GAAS [J].

PAPAZIAN, SA ;

REISMAN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :961-&

[8] MORPHOLOGY OF ORGANOMETALLIC CVD GROWN GAAS EPITAXIAL LAYERS [J].

REEP, DH ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :449-457

[9]

ROTH EA, 1963, RCA REV, V24, P499

[10] MASS SPECTRA OF VOLATILE HYDRIDES .1. MONOELEMENTAL HYDRIDES OF GROUP IVB AND VB ELEMENTS [J].

SAALFELD, FE ;

SVEC, HJ .

INORGANIC CHEMISTRY, 1963, 2 (01) :46-&

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