POLY(TRIFLUOROETHYL ALPHA-CHLOROACRYLATE AS A HIGHLY SENSITIVE POSITIVE ELECTRON RESIST

被引：40

作者：

TADA, T

机构：

[1] VLSI Technology Research Association, Cooperative Laboratories, Takatsu, Kawasaki

来源：

关键词：

electron beam; Integrated circuits; molecular orbital;

D O I：

10.1149/1.2128809

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：1829 / 1830

页数：2

共 7 条

[1] POLY(BUTENE-1 SULFONE) - HIGHLY SENSITIVE POSITIVE RESIST [J].

BOWDEN, MJ ;

THOMPSON, LF ;

BALLANTYNE, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1294-1296

[2]

GROBMAN WD, 1978, IEDM WASHINGTON, P58

[3]

SEKIGAWA K, 1976, 11TH P S SEM IC TECH, P66

[4]

SUMI M, 1978, 10TH P C SOL STAT DE, P303

[5]

TADA T, 1978, 154TH ECS M, V78, P475

[6]

TADA T, UNPUBLISHED

YU, HN ;

DENNARD, RH ;

CHANG, THP ;

OSBURN, CM ;

DILONARDO, V ;

LUHN, HE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1297-1300