DIAMOND GROWTH ON CARBON-IMPLANTED SILICON

被引：3

作者：

DEGUCHI, M ^{[1
]}

KITABATAKE, M ^{[1
]}

HIRAO, T ^{[1
]}

MORI, Y ^{[1
]}

MA, JS ^{[1
]}

ITO, T ^{[1
]}

HIRAKI, A ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90431-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Diamond has been deposited on a silicon surface modified by low-energy carbon ion implantation. Carbon ions, which were excited by an RF discharge of methane diluted with hydrogen gas and were accelerated by 3 kV DC voltage, were implanted into silicon substrates with a dose of 3 x 10(16) ions/cm2. The diamond particles grown on carbon-implanted silicon substrates using a conventional microwave plasma chemical vapor deposition system were single crystals with well defined facets. It was found that the nucleation density on this modified-surface was 5.4 times larger than that on a mirror polished silicon surface. These effects can be originated from microscopic diamonds formed in the carbon-implanted layer during diamond deposition. The high quality diamond particles grew up to 20 mum, because microscopic diamonds act like single nuclei for diamond growth.

引用

页码：291 / 295

页数：5

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