COMPARISON OF LOW-TEMPERATURE POLYSILICON CRYSTAL-GROWTH ON LOW-COST SUBSTRATES

被引：15

作者：

CZUBATYJ, W

BEGLAU, D

CHAO, BS

GONZALEZHERNANDEZ, J

PAWLIK, DA

KLERSY, P

JABLONSKI, D

HIMMLER, R

机构：

[1] Energy Conversion Devices, Inc., Troy

[2] Dept. de Fisica, CINVESTAV-IPN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.577504

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the growth of silicon polycrystals from deposited amorphous films on several different substrates. Using Raman spectroscopy, x-ray diffraction, transmission electron microscopy, and optical microscopy, we find that substrate choice affects crystallite size, preferential orientation, and growth rate. In addition, it is shown that large high quality crystals can be grown on low cost glasses.

引用

页码：294 / 298

页数：5