ELECTRICAL CHARACTERISTICS OF TIN CONTACTS TO N-SILICON

被引：161

作者：

WITTMER, M ^{[1
]}

STUDER, B ^{[1
]}

MELCHIOR, H ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,CH-8049 ZURICH,SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5722 / 5726

页数：5

相关论文

共 16 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[2] CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &
[3] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[4] CHEUNG N, 1980, 1979 P S THIN FILM I
[5] CROWLEY AM, 1970, SOLID STATE ELECTRON, V12, P403
[6] Gerstenberg D., 1963, ANN PHYSIK, V11, P354
[7] MAENPAA M, UNPUBLISHED
[8] NELSON CW, 1969, 1969 P INT S HYBR MI
[9] SOME PROPERTIES OF OHMIC METAL-SEMICONDUCTOR CONTACTS
NIBLER, F
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1572 - &
[10] DIFFUSION BARRIERS IN THIN-FILMS
NICOLET, MA
[J]. THIN SOLID FILMS, 1978, 52 (03) : 415 - 443