THE SI(001)/SIO2 INTERFACE

被引：18

作者：

OURMAZD, A

FUOSS, PH

BEVK, J

MORAR, JF

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90086-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.

引用

页码：365 / 371

页数：7

共 12 条

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