TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATIONS OF II-VI/GAAS HETEROSTRUCTURES

被引：9

作者：

BROWN, PD

LOGINOV, YY

MULLINS, JT

DUROSE, K

BRINKMAN, AW

HUMPHREYS, CJ

机构：

[1] UNIV DURHAM,DEPT PHYS,DURHAM DH1 3LE,ENGLAND

[2] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND

[3] KRASNOYARSK STATE UNIV,DEPT PHYS,660062 KRASNOYARSK,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90865-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Defect microstructures within heteroepitaxial layers may be categorized according to whether they arise due to problems at the epilayer/substrate interface, are introduced during growth itself or are due to some inherent materials problem. Examples taken from II-VI/GaAs systems showing interface reaction, lattice relaxation, banding due to compositional variations at the growth front and dimorphism are described.

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页码：538 / 544

页数：7

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