MICROSTRUCTURAL PROPERTIES OF EPITAXIAL CDS, (CD,ZN)S AND CDS-PARALLEL-TO(CD,ZN)S SUPERLATTICES

被引：6

作者：

BROWN, PD

LOGINOV, YY

DUROSE, K

MULLINS, JT

TAGUCHI, T

BURBERY, T

LAWSONJACK, S

JONES, I

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

[2] UNIV BIRMINGHAM,DEPT MET & MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90809-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial CdS, (Cd,Zn)S and CdS parallel-to (Cd,Zn)S superlattices have been grown by low pressure MOVPE on (001) and (111BAR)B GaAs substrates. TEM observations have shown that all the epilayers contained irregular arrays of thin planar defects, and higher densities were associated with layers containing higher proportions of Cd and this was attributed to the dimorphism of CdS.

引用

页码：536 / 542

页数：7

共 11 条

[1]

BROWN PD, 1991, MICROSCOPY SEMICONDU, V7

[2] THE PREPARATION OF TRANSMISSION ELECTRON-MICROSCOPE SPECIMENS FROM COMPOUND SEMICONDUCTORS BY ION MILLING [J].