EVALUATION OF INTERFACE DEFECTS AND THE EFFECT OF IODINE IMPURITY IN LOW-RESISTIVITY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION-GROWN ZNS FILMS ON GAAS

被引:24
作者
KAWAKAMI, Y
TAGUCHI, T
HIRAKI, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
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D O I
10.1116/1.583706
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1171 / 1178
页数:8
相关论文
共 17 条
[1]  
BARGHAVA RN, 1982, J CRYST GROWTH, V59, P15
[2]   THE GROWTH BY MOCVD USING NEW GROUP-VI SOURCES AND ASSESSMENT BY HRTEM AND CL OF ZN-BASED II-VI SINGLE-CRYSTAL LAYERS [J].
COCKAYNE, B ;
WRIGHT, PJ ;
SKOLNICK, MS ;
PITT, AD ;
WILLIAMS, JO ;
NG, TL .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :17-22
[3]   FORMATION AND ELIMINATION OF SURFACE ION MILLING DEFECTS IN CADMIUM TELLURIDE, ZINC-SULFIDE AND ZINC SELENIDE [J].
CULLIS, AG ;
CHEW, NG ;
HUTCHISON, JL .
ULTRAMICROSCOPY, 1985, 17 (03) :203-211
[4]   GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FUJITA, S ;
TOMOMURA, Y ;
SASAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09) :L583-L585
[5]  
GEZEI S, 1980, J APPL PHYS, V51, P1866
[6]  
Kawakami Y., 1986, Technology Reports of the Osaka University, V36, P335
[7]  
KAWAKAMI Y, 1985, P INT S BEHAVIOR LAT, P147
[8]   USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].
MATTHEWS, JW ;
BLAKESLEE, AE ;
MADER, S .
THIN SOLID FILMS, 1976, 33 (02) :253-266
[9]  
MITSUHASHI H, 1985, JPN J APPL PHYS, V24, P578
[10]   MOVPE OF NARROW GAP II-VI-COMPOUNDS [J].
MULLIN, JB ;
IRVINE, SJC ;
TUNNICLIFFE, J .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :214-222