THE REDUCTION OF BACKGATING IN GAAS-MESFETS BY IMPACT IONIZATION

被引：8

作者：

GEORGE, P

HUI, K

KO, PK

HU, CM

机构：

[1] ADV MICRO DEVICES INC,SUNNYVALE,CA 94088

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 10期

关键词：

D O I：

10.1109/55.62987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reduction of drain current due to reverse substrate bias in GaAs MESFET's fabricated on EL2-compensated substrates is recovered on the application of sufficient drain bias. This recovery is shown to be due to the compensation of the negative space charge at the channel-substrate interface by holes generated by impact ionization in the MESFET channel. Illumination raises the value of drain bias needed for current recovery due to the requirement of additional hole flux to offset the effects of optically generated electrons on EL2 occupancy. Simulation results show that the channel current becomes independent of substrate bias when the bias value is sufficient to completely delete the p-type surface layer. © 1990 IEEE

引用

页码：434 / 436

页数：3

共 6 条

[1] IMPACT IONIZATION IN GAAS-MESFETS [J].