CHARGED-IMPURITY SCATTERING IN GAINAS FETS

被引：6

作者：

RIDLEY, BK

机构：

[1] Department of Physics, University of Essex, Colchester, Essex CO4 3SQ, Wivenhoe Park

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 02期

关键词：

D O I：

10.1016/0038-1101(91)90075-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for calculating the mobility of electrons in heavily doped bulk and quantum-well GaInAs is presented. It is shown that a very simple modification of Thomas-Fermi screening plus taking into account statistical screening gives good agreement with experiment in bulk material (GaAs, InP and GaInAs). The model is applied to a uniformly doped quantum well of GaInAs and it is shown that the weaker screening in the quasi-2D case compared with the 3D case reduces the mobility by up to a factor of 2. A rough estimate is made of the effect of delta-doping which suggests that the latter can enhance the mobility significantly.

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收藏

页码：111 / 116

页数：6

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