HALL EFFECT AND IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON

[1] ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) : 236 - 239

[2] THEORY OF DONOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922

[3] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[4] IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1959, 115 (05): : 1107 - 1118

[5] LONG D, 1959, BUTT AMER PHYS SOC 2, V4, P145

[6] MACFARLAND, 1958, PHYS REV, V111, P1245

[7] PICUS, 1956, J PHYS CHEM SOLIDS, V1, P75

[8] THE TEMPERATURE VARIATION OF THE CONCENTRATION OF IMPURITY CARRIERS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (467): : 917 - 920

[1] ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) : 236 - 239

[2] THEORY OF DONOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922

[3] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[4] IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1959, 115 (05): : 1107 - 1118

[5] LONG D, 1959, BUTT AMER PHYS SOC 2, V4, P145

[6] MACFARLAND, 1958, PHYS REV, V111, P1245

[7] PICUS, 1956, J PHYS CHEM SOLIDS, V1, P75

[8] THE TEMPERATURE VARIATION OF THE CONCENTRATION OF IMPURITY CARRIERS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (467): : 917 - 920