ELECTRONIC-PROPERTIES OF 2-DIMENSIONAL D- CENTERS

被引：19

作者：

HUANT, S

MANDRAY, A

MARTINEZ, G

GRYNBERG, M

ETIENNE, B

机构：

[1] UNIV WARSAW, INST EXPTL PHYS, PL-00681 WARSAW, POLAND

[2] CNRS, L2M, F-92220 BAGNEUX, FRANCE

来源：

SURFACE SCIENCE | 1992年 / 263卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90410-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A magneto-optical study is carried out on selectively doped GaAs/GaAlAs multiple-quantum-well structures in which a population of D- centres (neutral donors that trap a second electron) exists under equilibrium conditions. The tilted-field behaviour of two-dimensional D- centres and the well-width dependence of their binding energy are described. Preliminary results of D- doping of quantum wells are presented which show that it has become possible to control the D- population of a two-dimensional system to an increasing level.

引用

页码：565 / 569

页数：5

共 20 条

[11] BINDING OF D- IONS IN A MAGNETIC-FIELD [J].