IMPACT IONIZATION IN SI BIPOLAR-DEVICES

被引：2

作者：

HERBERT, DC

机构：

[1] DRA Electronics Division, Malvern, Worcs. WR14 3PS, St Andrews Road

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 05期

关键词：

IMPACT IONIZATION; BIPOLAR TRANSISTORS; SILICON;

D O I：

10.1049/el:19950257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new theory of impact ionisation recently developed by the author is applied to breakdown in Si pin diodes and collectors of advanced bipolar transistors. Nonlocal aspects dominate the ionisation on short length scales, and good agreement is achieved between the theory and published breakdown and multiplication data.

引用

页码：334 / 335

页数：2

共 8 条

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[2]

HERBERT DC, 1993, SEMICOND SCI TECH, P8

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[4]

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[5]

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VERZELLESI, G ;

BACCARANI, G ;

CANALI, C ;

PAVAN, P ;

VENDRAME, L ;

ZANONI, E .

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[7]

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ZANONI, E ;

CRABBE, EF ;

STORK, JMC ;

PAVAN, P ;

VERZELLESI, G ;

VENDRAME, L ;

CANALI, C .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (02) :69-71

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