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ENERGY RELAXATION TO ACOUSTIC PHONONS IN QUASI-2-DIMENSIONAL SEMICONDUCTORS
被引:10
作者
:
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
机构:
USN,OFF NAVAL RES,ARLINGTON,VA 22217
USN,OFF NAVAL RES,ARLINGTON,VA 22217
FERRY, DK
[
1
]
机构
:
[1]
USN,OFF NAVAL RES,ARLINGTON,VA 22217
来源
:
SOLID STATE COMMUNICATIONS
|
1977年
/ 22卷
/ 02期
关键词
:
D O I
:
10.1016/0038-1098(77)90416-1
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:127 / 128
页数:2
相关论文
共 8 条
[1]
SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS
EZAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
EZAWA, H
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
KAWAJI, S
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
NAKAMURA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(01)
: 126
-
155
[2]
ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS
EZAWA, H
论文数:
0
引用数:
0
h-index:
0
EZAWA, H
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
KAWAJI, S
KURODA, T
论文数:
0
引用数:
0
h-index:
0
KURODA, T
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, K
[J].
SURFACE SCIENCE,
1971,
24
(02)
: 659
-
&
[3]
OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
机构:
USN,OFF NAVAL RES,PROGRAM ELECTR & SOLID STATE SCI,ARLINGTON,VA 22217
USN,OFF NAVAL RES,PROGRAM ELECTR & SOLID STATE SCI,ARLINGTON,VA 22217
FERRY, DK
[J].
SURFACE SCIENCE,
1976,
57
(01)
: 218
-
228
[4]
FERRY DK, IN PRESS
[5]
Greene R. F., 1957, J ELECTRON CONTR, V3
[6]
2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Gakushuin University, Mejiro, Toshima-ku, Tokyo
KAWAJI, S
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1969,
27
(04)
: 906
-
&
[7]
ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .2. SURFACE PHONON TREATMENT
KROWNE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
KROWNE, CM
HOLMKENN.JW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
HOLMKENN.JW
[J].
SURFACE SCIENCE,
1974,
46
(01)
: 232
-
250
[8]
HOT-ELECTRONS IN SI INVERSION LAYER
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
NAKAMURA, K
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 48
-
55
←
1
→
共 8 条
[1]
SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS
EZAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
EZAWA, H
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
KAWAJI, S
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA,TOKYO,JAPAN
NAKAMURA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(01)
: 126
-
155
[2]
ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS
EZAWA, H
论文数:
0
引用数:
0
h-index:
0
EZAWA, H
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
KAWAJI, S
KURODA, T
论文数:
0
引用数:
0
h-index:
0
KURODA, T
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, K
[J].
SURFACE SCIENCE,
1971,
24
(02)
: 659
-
&
[3]
OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
机构:
USN,OFF NAVAL RES,PROGRAM ELECTR & SOLID STATE SCI,ARLINGTON,VA 22217
USN,OFF NAVAL RES,PROGRAM ELECTR & SOLID STATE SCI,ARLINGTON,VA 22217
FERRY, DK
[J].
SURFACE SCIENCE,
1976,
57
(01)
: 218
-
228
[4]
FERRY DK, IN PRESS
[5]
Greene R. F., 1957, J ELECTRON CONTR, V3
[6]
2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Gakushuin University, Mejiro, Toshima-ku, Tokyo
KAWAJI, S
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1969,
27
(04)
: 906
-
&
[7]
ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .2. SURFACE PHONON TREATMENT
KROWNE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
KROWNE, CM
HOLMKENN.JW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
HOLMKENN.JW
[J].
SURFACE SCIENCE,
1974,
46
(01)
: 232
-
250
[8]
HOT-ELECTRONS IN SI INVERSION LAYER
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
NAKAMURA, K
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 48
-
55
←
1
→