KINETICS OF THE REACTION OF GALLIUM-ARSENIDE WITH MOLECULAR CHLORINE

被引：35

作者：

HA, JH

OGRYZLO, EA

POLYHRONOPOULOS, S

机构：

来源：

JOURNAL OF CHEMICAL PHYSICS | 1988年 / 89卷 / 05期

关键词：

D O I：

10.1063/1.454988

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：2844 / 2847

页数：4

共 22 条

[1] COMPOSITION-SELECTIVE PHOTOCHEMICAL ETCHING OF COMPOUND SEMICONDUCTORS [J].

ASHBY, CIH ;

BIEFELD, RM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :62-63

[2] THE THERMAL AND ION-ASSISTED REACTIONS OF GAAS(100) WITH MOLECULAR CHLORINE [J].

BALOOCH, M ;

OLANDER, DR ;

SIEKHAUS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :794-805

[3]

DEMERICAN B, 1983, Z NATURFORSCH A, V38, P811

[4] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J].

DONNELLY, VM ;

FLAMM, DL ;

TU, CW ;

IBBOTSON, DE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2533-2537

[5]

EGGERS DF, 1964, PHYSICAL CHEM, P733

[6]

ELIEEV VM, 1981, INORG MATER, V17, P9

[7] HOT JET ETCHING OF GAAS AND SI [J].

GEIS, MW ;

EFREMOW, NN ;

LINCOLN, GA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :315-317

[8] APPLICATION OF PLASMA-ETCHING TO VIA HOLE FABRICATION IN THICK GAAS SUBSTRATES [J].

GEISSBERGER, AE ;

CLAYTOR, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :863-866

[9]

GUTMAN V, 1967, HALOGEN CHEM, V2, P154

[10]

HA JS, IN PRESS

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