HOT JET ETCHING OF GAAS AND SI

[1] AKIYA H, 1981, 3RD P S DRY PROC TOK, P119

[2] ANISOTROPIC ETCHING OF AL BY A DIRECTED CL2 FLUX [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 337 - 340

[3] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[4] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393

[5] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1043 - 1046

[6] SIDGWICK NV, 1951, CHEM ELEMENTS THEIR, P1030

[7] Stull DR, 1971, JANAF THERMOCHEMICAL, V37

[1] AKIYA H, 1981, 3RD P S DRY PROC TOK, P119

[2] ANISOTROPIC ETCHING OF AL BY A DIRECTED CL2 FLUX [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 337 - 340

[3] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[4] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393

[5] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1043 - 1046

[6] SIDGWICK NV, 1951, CHEM ELEMENTS THEIR, P1030

[7] Stull DR, 1971, JANAF THERMOCHEMICAL, V37