HOT JET ETCHING OF GAAS AND SI

被引:25
作者
GEIS, MW
EFREMOW, NN
LINCOLN, GA
机构
[1] MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词
D O I
10.1116/1.583321
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
7
引用
收藏
页码:315 / 317
页数:3
相关论文
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