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REACTIVE ION ETCHING OF GAAS USING CCL2F2 AND THE EFFECT OF AR ADDITION
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DASARO LA, 1981, AM I PHYSICS C SERIE, V56, P267
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PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 18 (01)
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REACTIVE ION ETCHING OF GAAS AND INP USING SICL4
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (04)
:1053-1055