METALLIC QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

HARBISON, JP

SANDS, T

RAMESH, R

TABATABAIE, N

GILCHRIST, HL

FLOREZ, LT

KERAMIDAS, VG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：242 / 245

页数：4

共 10 条

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[8] ELECTRICAL-RESISTIVITY OF THIN EPITAXIAL NIAL BURIED IN (AL,GA)AS [J].

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[9] NEGATIVE DIFFERENTIAL RESISTANCE IN ALAS/NIAL/ALAS HETEROSTRUCTURES - EVIDENCE FOR SIZE QUANTIZATION IN METALS [J].

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[10]

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