NEGATIVE DIFFERENTIAL RESISTANCE IN ALAS/NIAL/ALAS HETEROSTRUCTURES - EVIDENCE FOR SIZE QUANTIZATION IN METALS

被引：60

作者：

TABATABAIE, N

SANDS, T

HARBISON, JP

GILCHRIST, HL

KERAMIDAS, VG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2528 / 2530

页数：3

共 10 条

[1] ELECTRONIC AND MAGNETIC STATES IN METALLIC COMPOUNDS .2. ELECTRON-TRANSPORT AND MAGNETIC SUSCEPTIBILITY IN NIAL AND FEAL [J].

CASKEY, GR ;

FRANZ, JM ;

SELLMYER, DJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (07) :1179-1198

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[3] BALLISTIC MEAN FREE PATH MEASUREMENTS OF HOT ELECTRONS IN AU FILMS [J].

CROWELL, CR ;

SZE, SM .

PHYSICAL REVIEW LETTERS, 1965, 15 (16) :659-&

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES [J].

HARBISON, JP ;

SANDS, T ;

TABATABAIE, N ;

CHAN, WK ;

FLOREZ, LT ;

KERAMIDAS, VG .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1717-1719

[5]

HUBERMAN HL, 1988, PHYS REV B, V37, P9065

[6]

LURY S, 1987, HETEROJUNCTION BAND, pCH12

[7] RANGE OF EXCITED ELECTRONS IN METALS [J].

QUINN, JJ .

PHYSICAL REVIEW, 1962, 1 (04) :1453-+

[8] EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES [J].

SANDS, T ;

HARBISON, JP ;

CHAN, WK ;

SCHWARZ, SA ;

CHANG, CC ;

PALMSTROM, CJ ;

KERAMIDAS, VG .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1216-1218

[9] STABILITY AND EPITAXY OF NIAL AND RELATED INTERMETALLIC FILMS ON III-V-COMPOUND SEMICONDUCTORS [J].

SANDS, T .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :197-199

[10] GALVANOMAGNETIC EFFECTS IN BETA-NIAL [J].

YAMAGUCHI, Y ;

BRITTAIN, JO .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1447-+

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